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MMBT4403
MMBT4403 PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-05-09 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEB0 Ptot - IC Tj TS
2.5 max
Grenzwerte (TA = 25C) MMBT4403 40 V 40 V 5V 250 mW 1) 600 mA -55...+150C -55...+150C
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis )
2
Kennwerte (Tj = 25C) Typ. - - - - - - - -
-4
Max. - - - 300 - 500 15 k 30 S 8*10-4 0.40 V 0.75 V
-
IC IC IC IC IC
= = = = =
0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA,
-
VCE VCE VCE VCE VCE
= = = = =
1V 1V 1V 2V 2V
hFE hFE hFE hFE hFE hfe hie hoe hre - VCEsat - VCEsat
30 60 100 100 20 60 1.5 k 1 S 0.1*10 - -
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain - Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverse voltage transfer ratio - Spannungsruckwirkung - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA
- - -
Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2)
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
MMBT4403 Characteristics (Tj = 25C) Min. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 35 V, - VEB = 0,4 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 35 V, - VEB = 0,4 V Gain-Bandwidth Product - Transitfrequenz - IC = 20 mA, - VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung - ICon = 10 mA - IBon = 1 mA IBoff = 1 mA td tr ts tf RthA - - - - - - - - < 420 K/W 1) MMBT4401 MMBT4403 = 2T 15 ns 20 ns 225 ns 30 ns CEBO - - 30 pf CCBO - - 8.5 pF fT 200 MHz - - - IEBV - -100 nA - ICEX - - 100 nA - VBEsat - VBEsat 0.75 V - - - 0.95 V 1.3 V Kennwerte (Tj = 25C) Typ. Max.
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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